Enhanced durabilityEquipped with Dynamic Thermal Guard protection, the Samsung 990 PRO ensures optimal performance by preventing overheating, alongside a robust shock and vibration tolerance that safeguards your data during unexpected jolts.High-speed performanceBoasting an impressive internal data rate of up to 7450 MBps for reading and 6900 MBps for writing, this solid state drive leverages PCI Express 4.0 x4 (NVMe) interface for swift data transfer, making it ideal for demanding applications and multitasking.Advanced securityWith 256-bit AES hardware encryption and TCG Opal Encryption, the Samsung 990 PRO offers a secure storage solution, protecting sensitive data against unauthorized access.Efficient operationFeatures like Device Sleep support and a low power consumption mode ensure the drive operates efficiently, reducing energy costs while maintaining high performance.Large capacity and reliabilityA generous 4 TB capacity backed by a 1,500,000 hours MTBF rating, coupled with S.M.A.R.T. compliance, provides ample storage for extensive digital libraries with dependable longevity.
Спецификации
- ManufacturerSAMSUNG
- Manufacturer Part NoMZ-V9P4T0BW
- Device TypeSolid state drive - internal
- NAND Flash Memory TypeMulti-level cell (MLC)
- InterfacePCIe 4.0 x4 (NVMe)
- FeaturesSamsung V-NAND 3bit MLC Technology, NVM Express (NVMe) 2.0, 4 GB Low Power DDR4 SDRAM Cache, TRIM support, Garbage Collection technology, Device Sleep support, Dynamic Thermal Guard protection, S.M.A.R.T.
- Width22 mm
- Depth80 mm
- Height2.3 mm
- Weight9 g
- Internal Data Rate7450 MBps (read) / 6900 MBps (write)
- MTBF1,500,000 hours
- InterfacesPCI Express 4.0 x4 (NVMe)
- Compatible BayM.2 2280
- Power Consumption5.5 Watt (average) 55 mW (idle)
- Min Operating Temperature0 °C
- Max Operating Temperature70 °C
- Warranty60 months
- EAN8806094947205
- Capacity4 TB
- Form FactorM.2 2280
- Software IncludedSamsung Magician Software
- Shock Tolerance (non-operating)1500 g
- Encryption Algorithm256-bit AES
- Hardware EncryptionYes
- Compliant StandardsIEEE 1667
- Shock Tolerance (operating)0.5 ms half-sine
- Maximum 4KB Random Write1550000 IOPS
- Maximum 4KB Random Read1600000 IOPS





