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Discover the Samsung 990 PRO, a solid state drive that redefines storage with its 4 TB capacity and advanced features designed for efficiency and security. Engineered with Samsung V-NAND 3bit MLC Technology, this internal hard drive delivers exceptional speed and reliability, making it an ideal choice for professionals and enthusiasts alike. The PCI Express 4.0 x4 (NVMe) interface ensures fast data transfer rates, while the integrated heatsink keeps the device cool, even under heavy use. With support for TRIM, Garbage Collection technology, and Device Sleep mode, it offers a blend of performance and power efficiency. Security is paramount, with 256-bit AES hardware encryption and TCG Opal Encryption providing peace of mind. Whether you're gaming, working on large projects, or simply need reliable storage, the Samsung 990 PRO is up to the task.
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Enhanced durabilityWith an MTBF of 1,500,000 hours and a robust integrated heatsink, this hard drive ensures reliability and longevity, making it a smart investment for serious users.Exceptional performanceBoasting an internal data rate of up to 7450 MBps for reading and 6900 MBps for writing, alongside maximum 4KB random reads of 1600000 IOPS and writes of 1550000 IOPS, this drive delivers swift and efficient data access and transfer.Advanced securityEquipped with 256-bit AES hardware encryption and TCG Opal Encryption, this device offers reliable data protection, keeping your sensitive information safe from unauthorized access.Innovative technologyFeaturing Samsung V-NAND 3bit MLC Technology, Garbage Collection technology, and TRIM support, this hard drive is designed for optimal performance and durability.Energy efficientWith a low power consumption of 5.5 W during average use and just 55 mW when idle, this hard drive is not only powerful but also energy efficient, reducing your carbon footprint and electricity costs.
Спецификации
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  • Manufacturer
    SAMSUNG
  • Manufacturer Part No
    MZ-V9P4T0CW
  • Device Type
    Solid state drive - internal
  • NAND Flash Memory Type
    Multi-level cell (MLC)
  • Interface
    PCIe 4.0 x4 (NVMe)
  • Features
    Samsung V-NAND 3bit MLC Technology, TRIM support, Device Sleep support, Garbage Collection technology, 2 GB Low Power DDR4 SDRAM Cache, S.M.A.R.T.
  • Width
    24.3 mm
  • Depth
    80 mm
  • Height
    8.2 mm
  • Weight
    28 g
  • Internal Data Rate
    7450 MBps (read) / 6900 MBps (write)
  • MTBF
    1,500,000 hours
  • Interfaces
    PCI Express 4.0 x4 (NVMe)
  • Compatible Bay
    M.2 2280
  • Power Consumption
    5.5 watt (average) 55 mW (idle)
  • Min Operating Temperature
    0 °C
  • Max Operating Temperature
    70 °C
  • Warranty
    60 months
  • EAN
    8806094946857
  • Capacity
    4 TB
  • Form Factor
    M.2 2280
  • Software Included
    Samsung Magician Software
  • Shock Tolerance (non-operating)
    1500 g
  • Encryption Algorithm
    256-bit AES
  • Hardware Encryption
    Yes
  • Integrated Heatsink
    Yes
  • Compliant Standards
    IEEE 1667
  • Shock Tolerance (operating)
    0.5 ms half-sine
  • Maximum 4KB Random Write
    1550000 IOPS
  • Maximum 4KB Random Read
    1600000 IOPS
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