Enhanced durabilityWith an MTBF of 1,500,000 hours and a robust integrated heatsink, this hard drive ensures reliability and longevity, making it a smart investment for serious users.Exceptional performanceBoasting an internal data rate of up to 7450 MBps for reading and 6900 MBps for writing, alongside maximum 4KB random reads of 1600000 IOPS and writes of 1550000 IOPS, this drive delivers swift and efficient data access and transfer.Advanced securityEquipped with 256-bit AES hardware encryption and TCG Opal Encryption, this device offers reliable data protection, keeping your sensitive information safe from unauthorized access.Innovative technologyFeaturing Samsung V-NAND 3bit MLC Technology, Garbage Collection technology, and TRIM support, this hard drive is designed for optimal performance and durability.Energy efficientWith a low power consumption of 5.5 W during average use and just 55 mW when idle, this hard drive is not only powerful but also energy efficient, reducing your carbon footprint and electricity costs.
Спецификации
- ManufacturerSAMSUNG
- Manufacturer Part NoMZ-V9P4T0CW
- Device TypeSolid state drive - internal
- NAND Flash Memory TypeMulti-level cell (MLC)
- InterfacePCIe 4.0 x4 (NVMe)
- FeaturesSamsung V-NAND 3bit MLC Technology, TRIM support, Device Sleep support, Garbage Collection technology, 2 GB Low Power DDR4 SDRAM Cache, S.M.A.R.T.
- Width24.3 mm
- Depth80 mm
- Height8.2 mm
- Weight28 g
- Internal Data Rate7450 MBps (read) / 6900 MBps (write)
- MTBF1,500,000 hours
- InterfacesPCI Express 4.0 x4 (NVMe)
- Compatible BayM.2 2280
- Power Consumption5.5 watt (average) 55 mW (idle)
- Min Operating Temperature0 °C
- Max Operating Temperature70 °C
- Warranty60 months
- EAN8806094946857
- Capacity4 TB
- Form FactorM.2 2280
- Software IncludedSamsung Magician Software
- Shock Tolerance (non-operating)1500 g
- Encryption Algorithm256-bit AES
- Hardware EncryptionYes
- Integrated HeatsinkYes
- Compliant StandardsIEEE 1667
- Shock Tolerance (operating)0.5 ms half-sine
- Maximum 4KB Random Write1550000 IOPS
- Maximum 4KB Random Read1600000 IOPS



