SAMSUNG SSD 990 EVO Plus 4TB M.2 NVMe PCIe

MZ-V9S4T0BWSamsung
Ограничено количество
The Samsung 990 EVO Plus is a powerful internal solid state drive designed to enhance storage performance with a 2 TB capacity. Featuring Samsung V-NAND TLC Technology, this drive ensures high-speed data transfer with an internal data rate of 7250 MBps and a write speed of 6300 MBps, enabling seamless operation for demanding applications and large file management. With support for PCI Express 4.0 and 5.0 interfaces, it meets various system requirements while offering speed and reliability.Designed with advanced features such as Intelligent TurboWrite Technology and an Auto Garbage Collection Algorithm, the Samsung 990 EVO Plus maintains efficiency and durability even under heavy workloads. Its shock and vibration resistance capability of up to 1500 g and a temperature range from -40°C to 85°C makes it suitable for both consumer and professional environments. This SSD ensures quick data access and provides hardware encryption for enhanced security, making it an ideal choice for users looking to upgrade system performance.
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Efficient data transferWith internal data rates reaching up to 7250 MBps, data can be transferred swiftly, enabling faster boot times and quicker application load speeds.High durabilityFeaturing a shock resistance of up to 1500 g and a vibration tolerance, this drive is rugged enough to withstand physical stress, ensuring reliable operation in various environments.Advanced performance managementSupports TRIM, Auto Garbage Collection, and Device Sleep to optimize performance and extend the lifespan of the drive, making it suitable for both everyday use and demanding applications.Enhanced security featuresEquipped with 256-bit AES hardware encryption and TCG Opal Encryption 2.0, the drive provides robust security measures to protect sensitive data from unauthorized access.
Спецификации
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  • Manufacturer
    SAMSUNG
  • Manufacturer Part No
    MZ-V9S4T0BW
  • Device Type
    Solid state drive - internal
  • NAND Flash Memory Type
    Triple-level cell (TLC)
  • Interface
    PCIe 5.0 x2 (NVMe)
  • Features
    Intelligent TurboWrite Technology, Samsung V-NAND TLC Technology, Device Sleep support, Host Memory Buffer (HMB), TRIM support, Auto Garbage Collection Algorithm, S.M.A.R.T., IEEE 1667
  • Width
    22.15 mm
  • Depth
    80.15 mm
  • Height
    2.38 mm
  • Weight
    9 g
  • Internal Data Rate
    7250 MBps (read) / 6300 MBps (write)
  • MTBF
    1.500.000 hours
  • Compatible Bay
    M.2 2280
  • Power Consumption
    5.5 watt (read) 4.8 watt (write) 60 mW (standby) 5 mW (sleep)
  • Service & Support
    Limited warranty - 5 years / 2400 TBW
  • Min Operating Temperature
    0 °C
  • Max Operating Temperature
    70 °C
  • Min Storage Temperature
    -40 °C
  • Max Storage Temperature
    85 °C
  • Vibration Tolerance (non-operating)
    20 g @ 20-2000 Hz
  • Warranty
    60 months
  • EAN
    8806095575667
  • Capacity
    4 TB
  • Form Factor
    M.2 2280
  • Software Included
    Samsung Magician Software
  • Shock Tolerance (non-operating)
    1500 g @ 0.5 ms
  • Encryption Algorithm
    256-bit AES
  • Humidity Range Operating
    5 - 95% (non-condensing)
  • Shipping Width
    9.9 cm
  • Shipping Depth
    2.29 cm
  • Shipping Height
    14.2 cm
  • Enclosure Material
    Nickel coating
  • Hardware Encryption
    Yes
  • Maximum 4KB Random Write
    1400000 IOPS
  • Maximum 4KB Random Read
    1050000 IOPS
Подобни продукти
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