High-speed performanceDelivers rapid data access and transfer with sequential read and write speeds up to support demanding workflows and quick application launches.Secure storageProvides hardware encryption using 256-bit AES and TCG Opal 2.0 to help protect sensitive data without impacting drive performance.Durable reliabilityCombines a long MTBF and strong shock tolerance to offer sustained operation and resilience in both portable and desktop environments.Energy-efficient operationMaintains low power consumption in typical and standby modes to help extend system battery life while remaining ready for active use.
Спецификации
- ManufacturerSAMSUNG
- Manufacturer Part NoMZ-V9V1T0BW
- Device TypeSolid state drive - internal
- InterfacePCIe 4.0 x4 (NVMe)
- FeaturesV-NAND Technology, Samsung Controller, Host Memory Buffer (HMB), TRIM support, Garbage Collection technology, S.M.A.R.T.
- Width80.15 mm
- Depth2.38 mm
- Height22.15 mm
- Weight9 g
- Internal Data Rate7150 MBps (read) / 6450 MBps (write)
- MTBF1,500,000 hours
- Compatible BayM.2 2280
- Power Consumption4 watt (read) 3.8 watt (write) 55 mW (standby) 3 mW (typical)
- Service & SupportLimited warranty - 3 years / 400 TBW
- Min Operating Temperature0 °C
- Max Operating Temperature70 °C
- Warranty24 months
- EAN8806099020699
- Capacity1 TB
- Form FactorM.2 2280
- Software IncludedSamsung Magician Software
- Encryption Algorithm256-bit AES
- Enclosure ColourBlack
- Hardware EncryptionYes
- Compliant StandardsIEEE 1667
- Shock Tolerance (operating)1500 g @ 0.5 ms
- Maximum 4KB Random Write1200000 IOPS
- Maximum 4KB Random Read850000 IOPS
