The Samsung 990 EVO Plus is an internal solid state drive designed for demanding applications. With a robust capacity of 1 TB, it ensures ample storage for a variety of files and applications. The drive utilizes PCI Express 5.0 and boasts internal data rates of up to 7150 MBps, allowing for quick data retrieval and minimal load times. Samsung’s V-NAND TLC Technology enhances performance and endurance, making it suitable for both everyday computing and intensive tasks. This drive is engineered to withstand a range of environmental conditions, operating effectively in temperatures from 0°C to 70°C and withstanding storage temperatures as low as -40°C and as high as 85°C. It features TRIM support and an Auto Garbage Collection Algorithm, ensuring optimal performance over time. Security is prioritized with hardware encryption and compliance with TCG Opal Encryption 2.0, safeguarding data against unauthorized access.
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High-speed performanceWith an internal data rate of 7150 MBps and write speeds up to 6300 MBps, the Samsung 990 EVO Plus delivers fast read and write capabilities, essential for power users and gamers.Robust durabilityDesigned to operate in harsh environments, this SSD can withstand temperatures from -40°C to 85°C, ensuring reliability in various conditions.Advanced securityThe drive features 256-bit AES hardware encryption, keeping data secure through TCG Opal Encryption 2.0, allowing users to have peace of mind about their sensitive information.Efficient power consumptionOperating at low power levels, including 5 mW during read mode and 4.2 watts in sleep mode, this drive is efficient, contributing to overall energy savings.Enhanced technology featuresEquipped with Intelligent TurboWrite Technology and Host Memory Buffer (HMB), this SSD provides faster performance and improved efficiency for all applications.
Спецификации
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  • Manufacturer
    SAMSUNG
  • Manufacturer Part No
    MZ-V9S1T0BW
  • Device Type
    Solid state drive - internal
  • NAND Flash Memory Type
    Triple-level cell (TLC)
  • Interface
    PCIe 5.0 x2 (NVMe)
  • Features
    Intelligent TurboWrite Technology, Samsung V-NAND TLC Technology, Device Sleep support, Host Memory Buffer (HMB), TRIM support, Auto Garbage Collection Algorithm, S.M.A.R.T., IEEE 1667
  • Width
    22.15 mm
  • Depth
    80.15 mm
  • Height
    2.38 mm
  • Weight
    9 g
  • Internal Data Rate
    7150 MBps (read) / 6300 MBps (write)
  • MTBF
    1.500.000 hours
  • Compatible Bay
    M.2 2280
  • Power Consumption
    4.3 watt (read) 4.2 watt (write) 60 mW (standby) 5 mW (sleep)
  • Service & Support
    Limited warranty - 5 years / 600 TBW
  • Min Operating Temperature
    0 °C
  • Max Operating Temperature
    70 °C
  • Vibration Tolerance (non-operating)
    20 g @ 20-2000 Hz
  • Warranty
    60 months
  • EAN
    8806095575674
  • Capacity
    1 TB
  • Form Factor
    M.2 2280
  • Software Included
    Samsung Magician Software
  • Shock Tolerance (non-operating)
    1500 g @ 0.5 ms
  • Encryption Algorithm
    256-bit AES
  • Enclosure Material
    Nickel coating
  • Hardware Encryption
    Yes
  • Maximum 4KB Random Write
    1350000 IOPS
  • Maximum 4KB Random Read
    850000 IOPS