Excellence in performanceThe 870 EVO achieves the maximum SATA interface limit of 560/530 MB/s sequential speeds. Everyday users can now enjoy professional-level SSD performance. Intelligent TurboWrite accelerates write speeds and maintains long-term high performance with a larger variable buffer.Industry-defining reliabilityThe 870 EVO meets the industry's leading standards of reliability. It withstands tasks from everyday computing to 8K video processing and comes equipped with the 6th Gen. VNAND and MKX controller that ensure a stable host experience.More compatible than everThe 870 EVO passed compatibility tests with major host systems and applications, including chipsets, motherboards, NAS and video recording devices. As the latest entry in the globally best-selling EVO series, the 870 EVO's proven versatility is compatible with any user's systems and tasks.Upgrade with easeUpgrading to the 870 EVO is made easy for anyone with a desktop PC or laptop that supports a standard 2.5-inch SATA form factor. Enjoying this masterpiece SSD is as convenient as plugging in the 870 EVO into a SATA slot and letting the renewed migration software take care of the rest.
Спецификации
- Капацитет250 GB
- Форм-фактор2.5"
- ManufacturerSAMSUNG
- Manufacturer Part NoMZ-77E250B/EU
- Device TypeSolid state drive - internal
- NAND Flash Memory Type3D multi-level cell (MLC)
- Width69.85 mm
- Depth100 mm
- Height6.8 mm
- Weight45 g
- Interfaces1 x SATA 6 Gb/s
- Compatible Bay2.5"
- EAN8806090545931
- Drive Transfer Rate600 MBps (external)
- Internal Data Rate560 MBps (read) / 530 MBps (write)
- MTBF1,500,000 hours
- Power Consumption2.2 watt (average) 3.5 watt (maximum)
- Compliant StandardsWWN, IEEE 1667
- Service & SupportLimited warranty - 5 years / 150 TBW
- Min Operating Temperature0 °C
- Max Operating Temperature70 °C
- SSD Endurance150 TB
- Hardware EncryptionYes
- Encryption Algorithm256-bit AES
- Features3-bit 3D V-NAND Technology, Samsung MKX Controller, TRIM support, Auto Garbage Collection Algorithm, Worldwide Name (WWN), Low Power DDR4 SDRAM Cache, TurboWrite Technology, sleep mode, S.M.A.R.T., 256-bit AES, IEEE 1667
- Maximum 4KB Random Write88000 IOPS
- Maximum 4KB Random Read98000 IOPS
- 4KB Random Read13000 IOPS
- 4KB Random Write36000 IOPS
- Software IncludedSamsung Magician Software
- Shock Tolerance (operating)1500 g @ 0.5 ms half-sine
- Buffer Size512 MB









