Efficient data transferWith internal data rates reaching up to 7250 MBps, data can be transferred swiftly, enabling faster boot times and quicker application load speeds.High durabilityFeaturing a shock resistance of up to 1500 g and a vibration tolerance, this drive is rugged enough to withstand physical stress, ensuring reliable operation in various environments.Advanced performance managementSupports TRIM, Auto Garbage Collection, and Device Sleep to optimize performance and extend the lifespan of the drive, making it suitable for both everyday use and demanding applications.Enhanced security featuresEquipped with 256-bit AES hardware encryption and TCG Opal Encryption 2.0, the drive provides robust security measures to protect sensitive data from unauthorized access.
Спецификации
- ManufacturerSAMSUNG
- Manufacturer Part NoMZ-V9S2T0BW
- Device TypeSolid state drive - internal
- NAND Flash Memory TypeTriple-level cell (TLC)
- InterfacePCIe 5.0 x2 (NVMe)
- FeaturesIntelligent TurboWrite Technology, Samsung V-NAND TLC Technology, Device Sleep support, Host Memory Buffer (HMB), TRIM support, Auto Garbage Collection Algorithm, S.M.A.R.T., IEEE 1667
- Width22.15 mm
- Depth80.15 mm
- Height2.38 mm
- Weight9 g
- Internal Data Rate7250 MBps (read) / 6300 MBps (write)
- MTBF1.500.000 hours
- Compatible BayM.2 2280
- Power Consumption4.6 watt (read) 4.2 watt (write) 60 mW (standby) 5 mW (sleep)
- Service & SupportLimited warranty - 5 years / 1200 TBW
- Min Operating Temperature0 °C
- Max Operating Temperature70 °C
- Vibration Tolerance (non-operating)20 g @ 20-2000 Hz
- Warranty60 months
- EAN8806095575650
- Capacity2 TB
- Form FactorM.2 2280
- Software IncludedSamsung Magician Software
- Shock Tolerance (non-operating)1500 g @ 0.5 ms
- Encryption Algorithm256-bit AES
- Enclosure MaterialNickel coating
- Hardware EncryptionYes
- Maximum 4KB Random Write1350000 IOPS
- Maximum 4KB Random Read1000000 IOPS
