High-performance storageDelivers industry-class read and write responsiveness to accelerate application launches and file transfers, with sequential and random performance tuned for demanding workloads.Generous capacityProvides 2 TB of internal solid-state storage to accommodate large project files, games, and multimedia collections while reducing reliance on external drives.Advanced data protectionIncludes hardware encryption with 256-bit AES and TCG Opal 2.0 support, along with S.M.A.R.T. monitoring and a high MTBF to help protect stored data and maintain reliability.Energy-efficient designSupports low-power idle and sleep modes and includes power-optimized operation to minimize energy use without compromising active performance.
Спецификации
- ManufacturerSAMSUNG
- Manufacturer Part NoMZ-V9V2T0BW
- Device TypeSolid state drive - internal
- InterfacePCIe 4.0 x4 (NVMe)
- FeaturesSamsung Controller, Host Memory Buffer (HMB), V-NAND Technology, TRIM support, Garbage Collection technology, sleep mode, S.M.A.R.T.
- Width22.15 mm
- Depth80.15 mm
- Height2.38 mm
- Weight9 g
- Internal Data Rate7250 MBps (read) / 6450 MBps (write)
- MTBF1,500,000 hours
- Compatible BayM.2 2280
- Power Consumption4.3 watt (read) 3.8 watt (write) 55 mW (idle) 3 mW (sleep)
- Service & SupportLimited warranty - 3 years / 800 TBW
- Min Operating Temperature0 °C
- Max Operating Temperature70 °C
- Warranty24 months
- EAN8806099020705
- Capacity2 TB
- Form FactorM.2 2280
- Software IncludedSamsung Magician Software
- Encryption Algorithm256-bit AES
- Hardware EncryptionYes
- Compliant StandardsIEEE 1667
- Shock Tolerance (operating)1500 g @ 0.5 ms
- Maximum 4KB Random Write1200000 IOPS
- Maximum 4KB Random Read850000 IOPS
