High-speed performanceThe Samsung 9100 PRO provides an internal data rate of 14700 MBps, ensuring rapid data access and transfer for demanding applications.Robust enduranceWith an endurance rating of 600 TB, this SSD is engineered for durability, suitable for intensive workloads.Advanced thermal managementThe integrated heatsink dissipates heat, maintaining optimal performance levels and extending the lifespan of the drive.Secure data protectionEquipped with hardware encryption using 256-bit AES, the Samsung 9100 PRO safeguards sensitive information without sacrificing speed.Efficient data handlingFeatures such as TRIM support and Auto Garbage Collection Algorithm contribute to improved drive efficiency and sustained performance over time.
Спецификации
- ManufacturerSAMSUNG
- Manufacturer Part NoMZ-VAP1T0BW
- Device TypeSolid state drive - internal
- NAND Flash Memory TypeTriple-level cell (TLC)
- InterfacePCI Express 5.0 x4 (NVMe)
- FeaturesTRIM support, Auto Garbage Collection Algorithm, Device Sleep support, Samsung V-NAND TLC Technology, integrated heatsink, Intelligent TurboWrite 2.0 Technology, PlayStation compatible, NVMe 2.0, S.M.A.R.T.
- Width22.15 mm
- Depth80.15 mm
- Height2.38 mm
- Weight9 g
- SSD Endurance600 TB
- Internal Data Rate14700 MBps (read) / 13300 MBps (write)
- MTBF1.500.000 hours
- Compatible BayM.2 2280
- Power Consumption7.6 watt (read) 7.2 watt (write) 4 watt (idle) 3.3 mW (sleep)
- Service & SupportLimited warranty - 5 years / 600 TBW
- Min Operating Temperature0 °C
- Max Operating Temperature70 °C
- Min Storage Temperature-40 °C
- Max Storage Temperature85 °C
- Vibration Tolerance (non-operating)20 g @ 20-2000 Hz
- Warranty60 months
- EAN8806095811628
- Capacity1 TB
- Form FactorM.2 2280
- Software IncludedSamsung Magician Software
- Shock Tolerance (non-operating)1500 g @ 0.5 ms half-sine
- Encryption Algorithm256-bit AES
- Package DetailsBox
- Humidity Range Operating5 - 95% (non-condensing)
- Enclosure ColourBlack
- Hardware EncryptionYes
- Compliant StandardsIEEE 1667
- Maximum 4KB Random Write2600000 IOPS
- Maximum 4KB Random Read1850000 IOPS























